Presentations:
The Open Gate Phenomenon: A Basis for New Energy Technologies (paper ID 10871) was presented at the 241st American Chemical Society National Meeting in Anaheim, CA on March 28, 2011 in the Division of Environmental Chemistry, New Energy Technology Session.
Publications:
S. L. Taft. A unique metal-semiconductor interface and resultant electron transfer phenomenon, arXiv.org, 2012, 1202.5771 (http://arxiv.org/abs/1202.5771)